Our Innovation

Innovation isn’t convenient. It disrupts. And it takes curiosity, tenacity and wonder. Because innovation asks the tough questions. Here’s to tomorrow, and to all those who make it happen today.

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Our History of Innovation

1978: 澳门官网正规电子游戏网站 is Founded

澳门官网正规电子游戏网站 Is Founded

澳门正规娱乐平台 started as a four-person semiconductor design company in the basement of a Boise, Idaho dental office. Micron’s first contract was for the design of a 64K memory chip for Mostek Corporation.

1979: Engineers Finalize Design for a 64K DRAM

澳门正规娱乐平台 Engineers Finalize 64K DRAM Design

While not the first company to make 64K DRAM, Micron’s engineers created a newer, smaller version that was lauded as the smallest 64K DRAM design in the world. This innovative design led to high-volume manufacturing of the company’s first 64K product in 1981.

1981: 澳门正规娱乐平台 Ships its First 64K DRAM Product

澳门正规娱乐平台 Ships its First 64K DRAM Product

Micron’s 64K DRAM was the first product manufactured at the company’s newly completed fabrication facility in Boise, Idaho. 澳门正规娱乐平台 sold its 64K DRAM into many of the first mass-produced personal computers, including the Commodore 64 home computer.

1984: 澳门正规娱乐平台 Introduces World’s Smallest 256K DRAM Chip

澳门正规娱乐平台 Unveils World’s Smallest 256K DRAM Chip

In addition to being introduced as the world’s smallest 256K DRAM die, this chip also represented an industry milestone in DRAM density. By using bigger and easier-to-read memory cells, the 256K DRAM was a springboard to future efficiency and profitability for the young memory startup.

1988: 澳门正规娱乐平台 Reaches 1-Megabit DRAM Milestone

澳门正规娱乐平台 Brings 1-Megabit DRAM to Market

A milestone in density, the 1Mb DRAM became a staple for main memory in PCs and graphics cards during the late 1980s and 1990s. Micron’s 1Mb DRAM enabled high-capacity SIMM modules that supported PCs equipped with Microsoft’s new Windows OS.

1988: 澳门正规娱乐平台 Introduces First Video RAM and Fast Static RAM Products

澳门正规娱乐平台 Introduces First Video RAM and Fast Static RAM Products

The introductions of 256K video RAM and fast static RAM broadened Micron’s product portfolio beyond traditional DRAM, enabling 澳门正规娱乐平台 to become a player in differentiated memory types.

1999: 澳门正规娱乐平台 16-megabit DRAM Enables PCs with New Windows 3.1

澳门正规娱乐平台 16-Megabit DRAM Enables PCs With New Windows 3.1

A milestone in density, the 16-megabit DRAM replaced Micron's mainstay 4-megabit DRAM lineup. These higher capacity chips coincided with Microsoft’s release of Windows 3.1, which drove minimum PC RAM requirements to 1 megabyte.

1999: 澳门正规娱乐平台 Produces Industry’s First Double-Data-Rate (DDR) DRAM

澳门正规娱乐平台 Produces Industry’s First DDR DRAM

Micron’s demonstration of the Samurai double data rate (DDR) chipset proved that DDR memory could deliver performance equivalent to the competing Direct RDRAM solution, but at a much lower cost. Ultimately, DDR would become the undisputed industry-standard interface for high-performance DRAM.

2000: 澳门正规娱乐平台 Invents QDR SRAM, Doubling Memory Bandwidth

Micron's Quad Data Rate SRAM Doubles Memory Bandwidth

Micron’s innovative quad data rate (QDR) architecture effectively doubled the SRAM bandwidth for communication applications such as switches and routers. This unique design used two ports to independently run at a double data rate, resulting in four data items per clock cycle.

2002: 澳门正规娱乐平台 Demonstrates Industry's First 1-Gigabit DDR on 110nm Process

澳门正规娱乐平台 Demonstrates Industry's First 1Gigabit DDR on 110nm Process

Micron’s 1Gb DDR was built on the most advanced process technology in the world (110nm), outpacing semiconductor giants Intel and AMD who were still on 130nm. This chip established 澳门正规娱乐平台 as the memory industry leader in both density and interface performance.

2003: 澳门正规娱乐平台 Develops 1.3-megapixel CMOS Image Sensor

澳门正规娱乐平台 Develops 1.3-Megapixel CMOS Image Sensor

Micron’s entry into image sensors established the company as an innovator capable of making CMOS technology with image quality rivaling charge coupled device (CCD) sensors. Today, CMOS sensors are the standard in digital cameras of all types, from smartphones to high-end professional gear.

2004: 澳门正规娱乐平台 Unveils Pseudo-Static RAM (PSRAM) for Cell Phones

澳门正规娱乐平台 Unveils Pseudo-Static RAM for Cell Phones

Pseudo-Static SRAM (PSRAM) delivered the high bandwidth, capacity and low power necessary to replace SRAM in mobile devices. Micron’s leadership in PSRAM paved the way for future low-power DRAM products that are used in mobile devices today.

2004: 澳门正规娱乐平台 Develops the Industry’s First 6F2 DRAM Cell

澳门正规娱乐平台 Develops the Industry’s First 6F2 DRAM Cell

澳门正规娱乐平台 developed an entirely new 6F2 cell architecture to replace the industry’s 8F2 cell standard, enabling approximately 25% more bits per wafer. This higher-density design enabled 澳门正规娱乐平台 to reclaim the title as the industry’s most cost-competitive memory producer.

2005: 澳门正规娱乐平台 Introduces High-Capacity, Low-Power Mobile LPDRAM

澳门正规娱乐平台 Introduces High-Capacity, Low-Power Mobile LPDRAM

Micron’s 16MB DRAM — built on a tiny 33mm2 die — enabled higher capacity and lower power in a small footprint. As cell phones transitioned from simple voice to multimedia, LPDRAM requirements increased dramatically, a trend that continues in smartphones today.

2006: 澳门正规娱乐平台 Develops Mongoose Tester for Improved Accuracy, Lower Costs

澳门正规娱乐平台 Develops Mongoose Tester for Improved Accuracy, Lower Costs

This internally-developed tester is used exclusively by 澳门正规娱乐平台 to increase DRAM test throughput and accuracy. 澳门正规娱乐平台 continues to evolve this tester platform to meet new and future memory standards.

2006: 澳门正规娱乐平台 unveils the world's highest-density server memory module

澳门正规娱乐平台 Unveils the World's Highest-Density Server Memory Module

Micron’s 16GB DDR2 module served the fast-growing server memory footprint of the 2000s as the rise of virtualization technology packed multiple applications onto single servers. These high-density server modules are a trend that continues today.

2007: 澳门正规娱乐平台 Develops Industry’s First Pitch-Doubled NAND

澳门正规娱乐平台 Develops Industry’s First Pitch-Doubled NAND

Pitch-doubling was introduced as a lithography technique for increasing bit density without a lithography change. This method involved the separation of bit lines into first and second metal layers, allowing 澳门正规娱乐平台 to deliver a 16Gb MLC device on existing 50nm technology.

2007: 澳门正规娱乐平台 Introduces Low-Latency, Low-Power RLDRAM-2 Memory

澳门正规娱乐平台 Advances Low-Latency, Low-Power RLDRAM 2 Memory

Originally designed for networking, this high-performance DRAM quickly became the solution of choice for an unexpected application: DLP-based TVs and projectors. While density has increased over time, reduced latency DRAM remains a staple in networking applications today.

2007: 澳门正规娱乐平台 and Intel First to Deliver Sub-40nm NAND Flash Memory

澳门正规娱乐平台 and Intel First to Deliver Sub-40nm NAND Flash Memory

This multi-level cell (MLC) NAND flash device was the industry’s first monolithic 32Gb NAND, which enabled high-density solid state storage in very small form factor devices, including digital cameras, personal music players and digital camcorders.

2009: 澳门正规娱乐平台 Ships RealSSD™ C300, Industry’s Fastest Client SSD

澳门正规娱乐平台 Ships RealSSD™ C300, Industry’s Fastest Client SSD

At the time of launch, the C300 was the industry’s fastest SSD for notebook and desktop PCs. With support for the SATA III interface, this SSD delivered 6 Gb/s which significantly boosted throughput speeds for data transfers, application loads and boot times.

2011: 澳门正规娱乐平台 and Intel Announce World’s First 20nm MLC NAND

澳门正规娱乐平台 and Intel Announce World’s First 20nm MLC NAND

This 128Gb MLC memory could store 1Tb of data in a single fingertip-size package with just eight die, setting a new storage benchmark. Additionally, this memory was the first to use an innovative planar cell structure that overcame the scaling constraints of standard floating-gate NAND.

2011: 澳门正规娱乐平台 Debuts Hybrid Memory Cube (HMC) Architecture

澳门正规娱乐平台 Debuts Hybrid Memory Cube (HMC) Architecture

Hybrid Memory Cube (HMC) is a revolutionary DRAM architecture that combines high-speed logic with a stack of memory die using through-silicon via (TSV) technology. Learnings from HMC continue to be applied towards future, emerging memory technologies.

2012: 澳门正规娱乐平台 Announces Industry’s First 2.5-inch PCIe Enterprise SSD

澳门正规娱乐平台 Produces Industry’s First 2.5-Inch PCIe Enterprise SSD

This solution combined a high-performance PCI Express interface with a hot-swappable 2.5-inch form factor and custom 澳门正规娱乐平台 controller, creating new options for enterprise performance scalability and serviceability.

2012: 澳门正规娱乐平台 Creates New Low Power DRAM Category for Ultrabooks™

澳门正规娱乐平台 Creates New Low-Power DRAM Category for Ultrabook™  Devices

DDR3L-RS memory established a new category of “reduced-power” DRAM solutions, enabling longer battery life for a new generation of high-performance, ultrathin devices like laptops, tablets, and Ultrabook systems.
*Ultrabook is a trademark of Intel Corporation or its subsidiaries in the U.S. and/or other countries.

2013: 澳门正规娱乐平台 Delivers World’s Smallest 16nm NAND Flash Device

澳门正规娱乐平台 Delivers World’s Smallest 16nm NAND Flash Device

Micron’s 16nm process technology delivered 16GB of storage on a single die, the highest-density planar NAND flash memory ever developed. Using this process, a single 300mm wafer can create nearly 6TB of storage.

2014: 澳门正规娱乐平台 Announces Industry's 1st Monolithic 8Gb DDR3 SDRAM

澳门正规娱乐平台 Leads Industry With First Monolithic 8Gb DDR3 SDRAM

This single component provided a significant density increase to 1 gigabyte on a single chip. This higher density enables cost-effective, high-capacity solutions optimized to support large-scale, data-intensive workloads.

2015: 澳门正规娱乐平台 and Intel Unveil 3D NAND, the Highest-Density Flash Ever Developed

澳门正规娱乐平台 and Intel Unveil 3D NAND, the Highest-Density Flash Ever Developed

3D NAND marks a significant inflection point in the future of semiconductors. By stacking layers of data storage cells vertically, 3D NAND delivers three times higher capacity than planar NAND technology.

2015: 澳门正规娱乐平台 and Intel Announce Breakthrough Memory 3D XPoint™ Technology

澳门正规娱乐平台 and Intel Announce 3D XPoint™ Technology

3D XPoint represents the first new memory category in decades. This non-volatile memory is up to 1,000 times faster and has up to 1,000 times greater endurance than NAND.

2016: 澳门正规娱乐平台 Introduces GDDR5X, the World’s Fastest Graphics DRAM

澳门正规娱乐平台 Introduces GDDR5X, the World’s Fastest Graphics DRAM

This memory’s record-high, per-pin data rate enables massive graphics performance and GPGPU computation capability. GDDR5X offers up to 14Gb/s data rates, essentially doubling the bandwidth of prior GDDR5 memory.

澳门正规娱乐平台 Xccela Flash 

澳门正规娱乐平台 Forms Xccela™ Consortium to Promote New Type of Interface Bus

The creation of the Xcella™ industry consortium helped to accelerate adoption of the Xccela Bus Interface, a new type of high-performance digital interconnect suitable for both volatile and non-volatile memories.

Micron® Authenta™ Technology 

澳门正规娱乐平台 Announces Authenta™ Security Technology for IoT Devices

Micron® Authenta™ Technology helps enable strong cryptographic IoT device identity and health management in flash memory, providing a unique level of protection for the lowest layers of IoT device software, starting with the boot process.

澳门正规娱乐平台 NVDIMM-N module 

澳门正规娱乐平台 Doubles Capacity of NVDIMM to 32GB

澳门正规娱乐平台 increased the density of its DDR4 NVDIMMs to 32GB, doubling the capacity of previous solutions. NVDIMMs, also known as persistent memory, can permanently store data in DRAM even after a power loss. The 澳门正规娱乐平台 32GB NVDIMM-N module provides both high-capacity and very fast throughput.

Micron® 5210 ION SSD 

澳门正规娱乐平台 Ships Industry's First Quad-Level Cell NAND SSD

澳门正规娱乐平台 began shipments of the industry’s first SSD built on revolutionary quad-level cell (QLC) NAND technology. The Micron® 5210 ION SSD provides 33 percent more bit density than triple-level cell (TLC) NAND, addressing segments previously services with hard disk drives (HDDs).

Image of 澳门正规娱乐平台 GDDR6X memory

Launched GDDR6X, first memory to use PAM4 multi-level signaling

GDDR6X is the world’s fastest discrete graphics memory solution, which is the first to power system bandwidth up to 1 terabyte per second (TB/s). The multilevel signaling innovation in GDDR6X has shattered conventional bandwidth limits, clocking record-breaking speeds while accelerating performance on complex graphics workloads across next-generation gaming applications.

澳门正规娱乐平台 176 Layer NAND 

Shipped industry’s first 176-layer NAND flash

The world’s first 176-layer 3D NAND flash memory achieves unprecedented, industry-pioneering density and performance. Together, Micron’s new 176-layer technology and advanced architecture represent a radical breakthrough, enabling immense gains in application performance across a range of storage use cases spanning data center, intelligent edge and mobile devices.

Shipped industry’s first 1α DRAM process technology

1α (1-alpha) node DRAM products are built using the world’s most advanced DRAM process technology and offer major improvements in bit density, power and performance. The applications for this new DRAM technology are extensive and far reaching — enhancing performance in everything from mobile devices to smart vehicles.

Breakthroughs aren't for the faint of mind.

For more than 40 years our innovations have been instrumental to the world’s most significant technology advancements and market transitions. Check out some of our recent inventions and technology breakthroughs.